SI2301BDST1E3
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Краткое описание:
P-Channel MOSFET, -20V, 2.4A, 100mR, SOT-23-3
Дополнительная информация
P-channel MOSFET transistor, single element configuration, designed for surface mount applications in a SOT-23-3 package. Features a continuous drain current of 2.4A, a drain-to-source breakdown voltage of -20V, and a low on-state resistance of 100mΩ at a gate-to-source voltage of 4.5V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 900mW. Includes a nominal Vgs of -950mV and a threshold voltage of -950mV.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.45mm |
| Length | 2.9mm |
| Series | SI2 |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 100mR |
| Nominal Vgs | -950mV |
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 375pF |
| Power Dissipation | 700mW |
| Threshold Voltage | -950mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| On-State Resistance | 100MR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Element Configuration | Single |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 4.5V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
