SI2305DS-T1-E3
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P-Channel Power MOSFET, 8V, 3.5A, 52mR, SOT-23-3
Дополнительная информация
P-channel power MOSFET for general-purpose applications. Features a low drain-source on-resistance of 52mΩ at a gate-source voltage of -800mV. Supports a continuous drain current of 3.5A and a drain-source breakdown voltage of 8V. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component offers fast switching speeds with turn-on delay of 13ns and fall time of 25ns. Maximum power dissipation is 1.25W, operating across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.055inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Nominal Vgs | -800mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23-3 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.245nF |
| Power Dissipation | 1.25W |
| Threshold Voltage | -800mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | -8V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 52mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 52mR |
| Drain to Source Breakdown Voltage | 8V |
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