SI2309CDS-T1-E3
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P-CH MOSFET, 60V, 1.2A, 345mR, SOT-23-3, Surface Mount
Дополнительная информация
P-Channel MOSFET, SOT-23-3 package, offering a 60V Drain-Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Features a low Drain-Source On Resistance (Rds On) of 345mR, with fast switching times including a 40ns Turn-On Delay and 15ns Turn-Off Delay. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.7W. This surface-mount component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 345mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 210pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 345mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 345mR |
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