SI2309CDS-T1-GE3
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Краткое описание:
P-CH MOSFET, -60V, 1.2A, 345mR, SOT-23-3, Surface Mount
Дополнительная информация
P-channel MOSFET, SOT-23-3 package, featuring a continuous drain current of 1.2A and a drain-source voltage of -60V. Offers a maximum drain-source on-resistance of 345mR. Operates with a gate-source voltage up to 20V and a threshold voltage of -1V. Maximum power dissipation is 1.7W, with a surface mount design. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 12A |
| Voltage | 60V |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 345mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 210pF |
| Power Dissipation | 1W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 345mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 345mR |
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