SI2316DS-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 2.9A 50mR SOT-23-3
Дополнительная информация
The SI2316DS-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 700mW and a continuous drain current of 2.9A. The device features a drain to source resistance of 50mR and a turn-on delay time of 9ns. It is RoHS compliant and available in a tape and reel packaging with 3000 units per package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 215pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 30V |
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