SI2328DS-T1-GE3

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SI2328DS-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 100V 1.15A SOT-23 250mR
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-Channel MOSFET, 100V Drain-Source Voltage, 1.15A Continuous Drain Current. Features 250mΩ Max Drain-Source On-Resistance, 4V Threshold Voltage, and 730mW Max Power Dissipation. Packaged in a SOT-23-3 surface-mount case, this component offers fast switching with 7ns turn-on and 9ns turn-off delay times. Operating temperature range is -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 250mR
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 1
Threshold Voltage 4V
Number of Channels 1
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 9ns
Reach SVHC Compliant No
Max Power Dissipation 730mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 250mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.15A
Drain to Source Voltage (Vdss) 100V

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