SI2341DS-T1-GE3

Снят с производства
SI2341DS-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 30V 2.5A 72mR SOT-23
Производитель Vishay(Siliconix)
Категория Транзисторы
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, 30V Drain-Source Voltage (Vdss), 2.5A Continuous Drain Current (ID), and 72mR Drain-Source Resistance (Rds On Max). This surface mount component features a SOT-23-3 package with dimensions of 3.04mm length, 1.4mm width, and 1.02mm height. It offers a maximum power dissipation of 710mW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and 20ns fall time.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 20ns
Packaging Tape and Reel
Rds On Max 72mR
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 400pF
Number of Channels 1
Turn-On Delay Time 7ns
Turn-Off Delay Time 20ns
Max Power Dissipation 710mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 72mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 30V

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