SI2351DS-T1-E3
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Краткое описание:
P-CH MOSFET, 20V, 2.2A, 115mR, SOT-23-3
Дополнительная информация
P-channel MOSFET with 20V drain-source breakdown voltage and 2.2A continuous drain current. Features 115mΩ maximum drain-source on-resistance and a -20V drain-source voltage rating. Operates with a 12V gate-source voltage and exhibits a 9ns turn-on delay and 16ns fall time. Packaged in SOT-23-3 for surface mounting, this RoHS compliant component offers a 1W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 250pF |
| Power Dissipation | 1W |
| Threshold Voltage | -600mV |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | 20V |
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