SI3407DV-T1-E3

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SI3407DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 8A 24mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 8A continuous drain current. Features low 24mΩ drain-to-source resistance and 1.67nF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 4.2W. Packaged in a compact 6-TSOP surface-mount case, ideal for high-density applications.
RoHS Not Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 38ns
Packaging Tape and Reel
Rds On Max 24mR
Package/Case TSOP
RoHS Compliant No
Package Quantity 3000
Input Capacitance 1.67nF
Number of Channels 1
Turn-On Delay Time 32ns
Turn-Off Delay Time 53ns
Max Power Dissipation 4.2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 20V

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