SI3410DV-T1-E3

Снят с производства
SI3410DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 8A 19.5mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, 30V Vds, 8A continuous drain current, and 19.5mR Rds On. Features a 6-TSOP surface mount package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operating temperature range from -55°C to 150°C, with a maximum power dissipation of 2W. Includes fast switching characteristics with 10ns turn-on delay and 8ns fall time.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Tape and Reel
Rds On Max 19.5mR
Nominal Vgs 3V
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.295nF
Threshold Voltage 3V
Number of Channels 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 21ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 19.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 30V

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