SI3424CDV-T1-GE3

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SI3424CDV-T1-GE3 - Vishay(Semiconductors)
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Краткое описание: N-Channel MOSFET 30V 8A 26mR TSOP-6
Производитель Vishay(Semiconductors)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-Channel MOSFET featuring 30V drain-source voltage and 26mΩ drain-source resistance. This surface mount component offers a continuous drain current of 8A and a maximum power dissipation of 3.6W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 3ns turn-on delay and 8ns fall time. Packaged in TSOP for tape and reel distribution, this RoHS compliant device is ideal for power management applications.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 26mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 405pF
Power Dissipation 2W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 3ns
Radiation Hardening No
Turn-Off Delay Time 16ns
Max Power Dissipation 3.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 26mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 30V

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