SI3424DV-T1-E3
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Краткое описание:
N-CH MOSFET 30V 5A 28mR TSOP Surface Mount
Дополнительная информация
N-channel MOSFET featuring a 30V drain-source breakdown voltage and 5A continuous drain current. This surface-mount component offers a low drain-source on-resistance of 28mΩ, with fast switching characteristics including a 7ns turn-on delay and 10ns fall time. Operating across a wide temperature range of -55°C to 150°C, it supports up to 1.14W of power dissipation. The device is packaged in a TSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 800mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 800mV |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 30V |
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