SI3440DV-T1-GE3
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Краткое описание:
150V 1.5A N-Ch MOSFET, 375mR Rds On, TSOP, Surface Mount
Дополнительная информация
Single N-channel power MOSFET, 150V drain-source voltage, 375mΩ drain-source on-resistance, and 1.5A continuous drain current. Features 8ns turn-on delay, 20ns turn-off delay, and 15ns fall time. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. Packaged in a TSOP surface-mount case, this RoHS compliant component has a maximum power dissipation of 1.14W and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 375mR |
| Nominal Vgs | 4V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 375mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 375mR |
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