SI3442BDV-T1-E3
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Краткое описание:
N-Channel MOSFET, 20V, 3A, 57mR Rds On, TSOP-6
Дополнительная информация
Single N-Channel MOSFET, TSOP-6 package, 20V Drain-Source Voltage, 3A Continuous Drain Current, and 57mΩ maximum Drain-Source On-Resistance. Features 1.8V nominal Gate-Source Voltage and threshold voltage, with 295pF input capacitance. Operates from -55°C to 150°C, offering 860mW maximum power dissipation. Surface mount design with 15ns fall time and 20ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 57mR |
| Nominal Vgs | 1.8V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 295pF |
| Power Dissipation | 860mW |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 860mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 57mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 57mR |
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