SI3443CDV-T1-E3
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Краткое описание:
P-Channel MOSFET, 20V, 4.7A, 60mR, TSOP, Surface Mount
Дополнительная информация
Single P-Channel Power MOSFET in a TSOP-6 surface mount package. Features 20V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 4.7A. Offers a low drain-source on-resistance (Rds On) of 60mR at a nominal gate-source voltage (Vgs) of -600mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 11ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | -600mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 610pF |
| Threshold Voltage | -600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60mR |
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