SI3455ADV-T1-E3
Снят с производства
Увеличить
Краткое описание:
P-CH MOSFET 30V 2.7A 100mR TSOP Surface Mount
Дополнительная информация
P-channel MOSFET, 30V drain-source breakdown voltage, 2.7A continuous drain current, and 100mΩ maximum drain-source on-resistance. Features a 6-TSOP surface mount package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.14W. Includes a nominal gate-source voltage of -1V and a threshold voltage of -1V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | -1V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.14W |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
