SI3456CDV-T1-E3

Снят с производства
SI3456CDV-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: 30V 7.7A N-CH MOSFET 34mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 7.7A continuous drain current. Features low 34mΩ drain-to-source resistance and 460pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 3.3W. Packaged in a 6-lead TSOP for surface mounting, this component offers fast switching with turn-on delay of 20ns and fall time of 10ns.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 34mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 460pF
Number of Channels 1
Turn-On Delay Time 20ns
Turn-Off Delay Time 15ns
Max Power Dissipation 3.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 34mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.7A
Drain to Source Voltage (Vdss) 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.