SI3457CDV-T1-E3

Производится
SI3457CDV-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: P-CH MOSFET 30V 5.1A 74mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-Channel MOSFET with 30V Drain-Source Voltage and 5.1A Continuous Drain Current. Features low 74mΩ Drain-Source On-Resistance and 450pF Input Capacitance. Operates within -55°C to 150°C, with 3W Max Power Dissipation. Packaged in a 6-TSOP surface mount for tape and reel distribution.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 74mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 450pF
Number of Channels 1
Turn-On Delay Time 40ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Max Power Dissipation 3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 74mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.1A
Drain to Source Voltage (Vdss) 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.