SI3457CDV-T1-GE3
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Краткое описание:
P-CH MOSFET, -30V, 5.1A, 74mR Rds On, TSOP
Дополнительная информация
P-channel MOSFET with a 30V drain-source voltage and 5.1A continuous drain current. Features a low 74mΩ drain-source on-resistance and a 1V threshold voltage. Operates with a 20V gate-source voltage, offering fast switching with 40ns turn-on and 20ns turn-off delay times. Packaged in a compact 6-TSOP surface-mount case, this component boasts a 2W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 74mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 450pF |
| Power Dissipation | 2W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 74mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 74mR |
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