SI3459BDV-T1-E3
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Краткое описание:
P-CH MOSFET 60V 2.2A 216mR TSOP Surface Mount
Дополнительная информация
P-Channel MOSFET, 60V Vdss, 2.2A continuous drain current, and 216mR Rds On Max. Features a TSOP package for surface mounting, with a nominal Vgs of -3V and a threshold voltage of -3V. Operating temperature range from -55°C to 150°C, with a max power dissipation of 2W. Includes fast switching times with a turn-on delay of 5ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 216mR |
| Nominal Vgs | -3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 350pF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 216mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 216MR |
