SI3460BDV-T1-E3
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Краткое описание:
N-Channel MOSFET, 20V, 6.7A, 27mR Rds On, TSOP
Дополнительная информация
N-channel power MOSFET with 20V drain-source voltage and 6.7A continuous drain current. Features low 27mΩ drain-source on-resistance and 5ns turn-on delay. This surface-mount device, housed in a TSOP package, offers 2W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 860pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Max Output Current | 2A |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Dual Supply Voltage | 20V |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 27mR |
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