SI3460DV-T1-E3
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Краткое описание:
N-CH MOSFET 20V 5.1A 27mR TSOP Surface Mount
Дополнительная информация
N-channel MOSFET with 20V drain-source breakdown voltage and 5.1A continuous drain current. Features 27mΩ maximum drain-source on-resistance and 1.1W power dissipation. Operates from -55°C to 150°C, with 15ns turn-on delay and 30ns fall time. Packaged in a 6-pin TSOP for surface mounting, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 27mR |
| Drain to Source Breakdown Voltage | 20V |
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