SI3460DV-T1-GE3

Снят с производства
SI3460DV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 20V 6.8A 27mR TSOP SM
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL MOSFET, 20V Vdss, 6.8A Continuous Drain Current, 27mR Rds On. This surface mount component features a TSOP package and a maximum power dissipation of 1.1W. Operating temperature range is -55°C to 150°C, with fast switching characteristics including a 15ns turn-on delay and 30ns fall time. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 30ns
Packaging Tape and Reel
Rds On Max 27mR
Nominal Vgs 450mV
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage 450mV
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 27mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 6.8A
Drain to Source Voltage (Vdss) 20V

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