SI3493BDV-T1-E3
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P-Channel MOSFET, 20V, 7A, 27.5mR, TSOP
Дополнительная информация
P-channel power MOSFET, ideal for general-purpose power applications. Features a low 27.5mΩ drain-source on-resistance at a nominal Vgs of -900mV, supporting a continuous drain current of 7A and a drain-source voltage of -20V. This surface-mount device is housed in a compact TSOP package, measuring 3.05mm x 1.65mm x 1mm, and offers fast switching with turn-on delay of 22ns and turn-off delay of 75ns. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2.97W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 84ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27.5mR |
| Nominal Vgs | -900mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.805nF |
| Threshold Voltage | -900mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.97W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 27.5mR |
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