SI3586DV-T1-E3
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Краткое описание:
N/P-CH MOSFET 20V 2.9A/2.1A 110mR TSOP
Дополнительная информация
Surface mount N-channel and P-channel MOSFET transistor with 20V drain-source breakdown voltage. Features 2.9A continuous drain current for N-channel and 2.1A for P-channel, with a maximum drain-source on-resistance of 60mΩ. Operates within a temperature range of -55°C to 150°C, with a 1.1V threshold voltage. Packaged in a 6-pin TSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 1.1V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 830mW |
| Threshold Voltage | 1.1V |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 110mR |
| Drain to Source Breakdown Voltage | 20V |
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