SI3812DV-T1-E3

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SI3812DV-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 20V 2A 125mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, 20V Drain-Source Voltage (Vdss), 2A Continuous Drain Current (ID), and 125mΩ Drain-to-Source Resistance (Rds On Max). This surface-mount device features a 6-TSOP package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. It offers fast switching characteristics with a 10ns turn-on delay, 14ns turn-off delay, and 30ns fall time. Maximum power dissipation is 830mW, operating temperature range is -55°C to 150°C, and it is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series LITTLE FOOT®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 30ns
Packaging Tape and Reel
Rds On Max 125mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 830mW
Number of Channels 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 14ns
Max Power Dissipation 830mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 125mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2A
Drain to Source Voltage (Vdss) 20V

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