SI3951DV-T1-E3
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Краткое описание:
P-CH MOSFET 20V 2.7A 115mR TSOP Surface Mount
Дополнительная информация
P-channel MOSFET featuring 20V drain-source breakdown voltage and 2.7A continuous drain current. Surface mountable in a 6-TSOP package, this component offers a maximum on-resistance of 115mΩ. Operating across a temperature range of -55°C to 150°C, it boasts a 1.14W power dissipation and 30ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| Nominal Vgs | -1.5V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 250pF |
| Power Dissipation | 1.14W |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | 20V |
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