SI3981DV-T1-GE3
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Краткое описание:
P-CH MOSFET 20V 1.6A 185mR TSOP Surface Mount
Дополнительная информация
P-channel MOSFET with 20V drain-source breakdown voltage and 1.6A continuous drain current. Features 185mΩ maximum drain-source on-resistance and 800mW power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 6-TSOP package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 21ns |
| Packaging | Tape and Reel |
| Rds On Max | 185mR |
| Nominal Vgs | -1.1V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 800mW |
| Threshold Voltage | -1.1V |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 185mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain to Source Breakdown Voltage | 20V |
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