SI4104DY-T1-GE3
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Краткое описание:
N-CH MOSFET 100V 3.2A 5W 105mR SOIC
Дополнительная информация
N-channel MOSFET with 100V drain-to-source breakdown voltage and 3.2A continuous drain current. Features low 105mΩ drain-to-source resistance at 10V gate-source voltage and 5W maximum power dissipation. This surface-mount component, housed in a SOIC package, offers fast switching with 8ns fall time and 9ns turn-on delay. Operating temperature range is -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 446pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.5V |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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