SI4110DY-T1-GE3
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Краткое описание:
N-CH MOSFET 80V 17.3A 13mR SOIC SM
Дополнительная информация
N-Channel MOSFET featuring 80V drain-to-source breakdown voltage and 17.3A continuous drain current. Offers a low 13mΩ maximum drain-source on-resistance at 10V gate-source voltage, with a 7.8W maximum power dissipation. Surface mountable in an SOIC package, this component boasts fast switching speeds with an 8ns fall time and 18ns turn-on delay. Operating temperature range spans -55°C to 150°C, and it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.205nF |
| Power Dissipation | 3.6W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17.3A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 13mR |
| Drain to Source Breakdown Voltage | 80V |
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