SI4126DY-T1-GE3

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SI4126DY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 39A 2.75mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-CHANNEL MOSFET, 30V Vdss, 39A continuous drain current, and 2.75mΩ max drain-source on-resistance at 10V Vgs. Features 7.8W max power dissipation, 150°C max operating temperature, and SO package for surface mounting. Offers 4.405nF input capacitance and fast switching times with 36ns turn-on and 53ns turn-off delays. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 24ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2.75mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 4.405nF
Number of Channels 1
Turn-On Delay Time 36ns
Radiation Hardening No
Turn-Off Delay Time 53ns
Max Power Dissipation 7.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 39A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 2.75mR

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