SI4158DY-T1-GE3
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Краткое описание:
20V 25.8A N-CH MOSFET, 2.5mR Rds On, SOIC, Surface Mount
Дополнительная информация
N-channel MOSFET, 20V Drain-Source Voltage (Vdss), 25.8A Continuous Drain Current (ID), and 2.5mR maximum Drain-Source On-Resistance (Rds On Max). Features a 32ns fall time and 68ns turn-off delay time, with a 37ns turn-on delay time. This surface mount component operates within a -55°C to 150°C temperature range and offers 6W maximum power dissipation. Packaged in an 8-SOIC case, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 5.71nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 37ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 68ns |
| Max Power Dissipation | 6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 25.8A |
| Drain to Source Voltage (Vdss) | 20V |
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