SI4190ADY-T1-GE3
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Краткое описание:
N-Ch MOSFET 100V 8.8mR 18.4A SOIC Surface Mount
Дополнительная информация
N-Channel MOSFET, 100V Drain-Source Voltage (Vdss), 18.4A Continuous Drain Current (ID), and 8.8mΩ Drain-Source On Resistance (Rds On Max). Features include a 1.5V nominal Gate-Source Voltage (Vgs) and 1.5V Threshold Voltage. This surface mount component, housed in an SOIC package, offers 15ns turn-on and 34ns turn-off delay times, with a maximum power dissipation of 6W. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.8mR |
| Nominal Vgs | 1.5V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.97nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.8MR |
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