SI4190DY-T1-GE3
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Краткое описание:
100V 20A N-CH MOSFET, 8.8mR Rds On, SOIC
Дополнительная информация
N-channel MOSFET, 100V drain-source breakdown voltage, 20A continuous drain current, and 8.8mΩ maximum drain-source on-resistance. Features include 11ns fall time, 12ns turn-on delay, and 40ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 7.8W. Packaged in an 8-SOIC surface-mount package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.8mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2nF |
| Power Dissipation | 7.8W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.8MR |
| Drain to Source Breakdown Voltage | 100V |
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