SI4202DY-T1-GE3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
2N-CH MOSFET 30V 14mR SO DUAL N-CH
Дополнительная информация
Dual N-Channel MOSFET, 20V Gate-Source Voltage, 30V Drain-Source Voltage. Features 14mΩ maximum drain-source on-resistance and 12.1A continuous drain current. Surface mountable in an SO package, this component offers a fast 8ns fall time and 710pF input capacitance. Operating temperature range from -55°C to 150°C with 3.7W maximum power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Current | 75A |
| Voltage | 30V |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 710pF |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
