SI4226DY-T1-E3
Снят с производства
Увеличить
Краткое описание:
2 N-CH MOSFET 25V 7.5A 19.5mR SO Surface Mount
Дополнительная информация
Dual N-channel MOSFET, 25V Vdss, 7.5A continuous drain current, and 19.5mR Rds On. Features 1.255nF input capacitance, 8ns fall time, 14ns turn-on delay, and 30ns turn-off delay. Housed in an 8-pin SOIC package for surface mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.255nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
