SI4226DY-T1-GE3
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Краткое описание:
25V 7.5A N-CH MOSFET SOIC 19.5mR RdsOn
Дополнительная информация
Surface mount 2-channel N-channel MOSFET with 25V drain-source voltage and 7.5A continuous drain current. Features low 19.5mR drain-to-source resistance and 2W power dissipation. Operates across a -55°C to 150°C temperature range, with fast switching times including 8ns fall time, 14ns turn-on delay, and 30ns turn-off delay. Packaged in an 8-SOIC case, this RoHS compliant component is ideal for various electronic applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.255nF |
| Power Dissipation | 2W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 25V |
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