SI4230DY-T1-GE3
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Краткое описание:
2 N-CH MOSFET 30V 7.3A 20.5mR SOIC
Дополнительная информация
Dual N-channel MOSFET, 30V Vdss, 7.3A continuous drain current, and 20.5mR Rds On resistance. Features include 950pF input capacitance, 10ns fall time, 17ns turn-on delay, and 18ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 3.2W. Packaged in tape and reel, it is designed for efficient switching applications.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 20.5mR |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 2500 |
| Input Capacitance | 950pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
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