SI4320DY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 17A 3mR SO Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 17A continuous drain current. Features low 3mΩ drain-to-source resistance at 10V gate-source voltage. Surface mount SO package with 1.6W maximum power dissipation and 150°C maximum operating temperature. Ideal for power switching applications requiring fast switching speeds, with turn-on delay of 27ns and fall time of 21ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 6.5nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 107ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
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