SI4330DY-T1-E3
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Краткое описание:
30V 6.6A 16.5mR N-CH MOSFET SOIC
Дополнительная информация
Dual N-channel MOSFET, 30V drain-source breakdown voltage, 6.6A continuous drain current, and 16.5mΩ maximum drain-source on-resistance. Features a 10ns turn-on delay, 40ns turn-off delay, and 12ns fall time. Packaged in an 8-pin SOIC for surface mounting, this component offers 1.1W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 16.5mR |
| Drain to Source Breakdown Voltage | 30V |
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