SI4336DY-T1-E3

Снят с производства
SI4336DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 17A 3.25mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория Транзисторы
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 17A continuous drain current. Features low 3.25mΩ drain-to-source resistance and 1.6W maximum power dissipation. Packaged in an 8-SOIC surface-mount case, this component offers fast switching with a 16ns fall time and 24ns turn-on delay. Operating temperature range is -55°C to 150°C, with RoHS compliance and lead-free construction.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 16ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.25mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 5.6nF
Number of Channels 1
Turn-On Delay Time 24ns
Turn-Off Delay Time 90ns
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.25mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 30V

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