SI4340CDY-T1-E3
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Краткое описание:
2 N-CH MOSFET 20V 20A 9.4mR SOIC
Дополнительная информация
Dual N-Channel MOSFET, 20V Vdss, 20A continuous drain current, and 9.4mR Rds On. Features include 1.3nF input capacitance, 10ns fall time, 22ns turn-on delay, and 32ns turn-off delay. Operates from -55°C to 150°C with 5.4W max power dissipation. Packaged in a 14-SOIC surface mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.4mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.3nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 20V |
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