SI4368DY-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 17A 3.2mR SO Surface Mount
Дополнительная информация
The SI4368DY-T1-GE3 is a single N-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 17A and a drain to source resistance of 3.2mR. The device is packaged in a surface mount SO package and is RoHS compliant. It is suitable for use in a variety of applications including power management and switching circuits.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 41ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 8.34nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 172ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
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