SI4378DY-T1-E3
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Краткое описание:
N-CH MOSFET 20V 19A 2.7mR SOIC
Дополнительная информация
N-CHANNEL MOSFET, 20V Drain-Source Voltage (Vdss), 19A Continuous Drain Current (ID), and 2.7mΩ maximum Drain-Source On Resistance at 4.5V. Features include a 65ns fall time, 140ns turn-off delay, and 85ns turn-on delay. This surface mount component operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 1.6W. Packaged in SOIC for tape and reel delivery, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.7mR |
| Nominal Vgs | 600mV |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.5nF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 85ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2.7mR |
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