SI4388DY-T1-E3
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Краткое описание:
Dual N-Ch MOSFET 30V 11.3A 7mR SO Surface Mount
Дополнительная информация
Dual N-Channel MOSFET, 30V Drain-to-Source Voltage, 11.3A Continuous Drain Current, and 7mΩ Drain-to-Source Resistance. Features include a 14ns turn-on delay, 15ns fall time, and 40ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 3.5W. Packaged in SO, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 946pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Voltage (Vdss) | 30V |
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