SI4390DY-T1-E3
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Краткое описание:
30V 8.5A N-CH MOSFET 9.5mR SOIC
Дополнительная информация
N-channel MOSFET, 30V Vdss, 8.5A continuous drain current, and 9.5mR drain-source on-resistance. Features a 6ns fall time, 16ns turn-on delay, and 43ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in an 8-pin SOIC for surface mounting.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
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