SI4390DY-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 1-Channel 8.5A 30V SO Package
Дополнительная информация
The SI4390DY-T1-GE3 is a single N-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 8.5A and a drain to source voltage of 30V. The device is packaged in a surface mount SO package and is RoHS compliant. The MOSFET has a maximum power dissipation of 1.4W and a drain to source resistance of 9.5mR. It also features a fall time of 14ns and a turn-off delay time of 43ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 30V |
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