SI4401DY-T1-E3
Снят с производства
Увеличить
Краткое описание:
P-CH MOSFET -40V -8.7A 15.5mR SOIC
Дополнительная информация
P-channel MOSFET, 40V drain-source voltage, 8.7A continuous drain current, and 15.5mΩ maximum drain-source on-resistance. Features a 1.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. Surface mountable in a SOIC package, this component offers fast switching with turn-on delay of 17ns and fall time of 55ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15.5mR |
| Nominal Vgs | -1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 122ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 15.5mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
