SI4409DY-T1-E3
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Краткое описание:
P-CH MOSFET 150V 1.2R 900mA SO-8
Дополнительная информация
P-Channel MOSFET, 150V Drain-Source Breakdown Voltage, 900mA Continuous Drain Current, 1.2 Ohm Max Drain-Source On Resistance. Features include 10ns fall time, 7ns turn-on delay, and 13ns turn-off delay. Operates from -55°C to 150°C with 4.6W max power dissipation. Surface mountable in an 8-SOIC package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 332pF |
| Power Dissipation | 2.2W |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 4.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 900mA |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 150V |
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