SI4423DY-T1-E3
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Краткое описание:
P-CH MOSFET 20V 10A 7.5mR SOIC
Дополнительная информация
P-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 10A Continuous Drain Current, and 7.5mΩ Max Drain-Source On Resistance. Features a 75ns Turn-On Delay Time and 165ns Fall Time. Surface mountable in an 8-SOIC package, operating from -55°C to 150°C with 1.5W Max Power Dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 165ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | -400mV |
| Package/Case | SO |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 75ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 460ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 7.5mR |
| Drain to Source Breakdown Voltage | 20V |
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